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DMS3016SSS
Electrical Characteristics @ T A = 25°C unless otherwise stated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
0.1
±100
V
mA
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
V GS(th)
R DS (ON)
|Y fs |
V SD
I S
1.0
-
-
-
-
-
-
9
11
5
0.4
-
2.3
13
16
-
1
5
V
m Ω
S
V
A
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 9.8A
V GS = 4.5V, I D = 9.8A
V DS = 5V, I D = 9.8A
V GS = 0V, I S = 1A
-
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V GS = 4.5V
Total Gate Charge V GS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
0.53
-
-
-
-
-
-
-
-
1849
158
123
2.68
18.5
43
4.7
4.0
6.62
8.73
36.41
4.69
-
-
-
4.82
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
V DS =15V, V GS = 0V,
f = 1.0MHz
V DS =0V, V GS = 0V, f = 1MHz
V DS = 15V, V GS = 10V,
I D = 9.8A
V GS = 10V, V DS = 10V,
R G = 3 ? , R L = 1.2 ?
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
30
V GS = 4.5V
30
25
V GS = 4.0V
25
V DS = 5V
V GS = 3.5V
20
15
V GS = 3.0V
20
15
10
V GS = 2.5V
10
V GS = 150°C
V GS = 125°C
5
5
V GS = 85°C
V GS = 25°C
0
V GS = 2.0V
V GS = 2.2V
0
V GS = -55°C
0
0.5 1 1.5
2
0
0.5
1 1.5 2 2.5
3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMS3016SSS
Document number: DS32266 Rev. 3 - 2
2 of 6
www.diodes.com
September 2010
? Diodes Incorporated
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